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s is that of your substrate product. The lattice mismatch leads to a large buildup of strain energy in Ge levels epitaxially developed on Si. This strain energy is generally relieved by two mechanisms: (i) technology of lattice dislocations on the interface (misfit dislocations) and (ii) elastic deformation of each the substrate as well as Ge islan

Electronic band structure, Heterostructures, Current-voltage attribute, Terahertz radiation, Electroluminescence, Chemical vapor deposition, Gratings, Quantum wells, Germanium For the reason that demonstration of the semiconductor diode laser and the significant level of popularity of Si-primarily based transistor technological innovation, a laser